Trench MOS Having Source with Waffle Patterns
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00321792" target="_blank" >RIV/68407700:21230/18:00321792 - isvavai.cz</a>
Result on the web
<a href="http://radio.feld.cvut.cz/conf/poster/proceedings/Poster_2018/Section_EI/EI_051_Vacula.pdf" target="_blank" >http://radio.feld.cvut.cz/conf/poster/proceedings/Poster_2018/Section_EI/EI_051_Vacula.pdf</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Trench MOS Having Source with Waffle Patterns
Original language description
In power MOSFETs devices can be recognized trends to replace planar gate by trench gate structures. The power devices with planar gates are simplier to fabricate and have higher maturity than non-planar power MOSFETs. In contrast Trench MOSFETs have a better performance but are more complex to fabricate and due to this have lower maturity. Proposed paper describe two new trench MOSFET structures with different gate patterns with optimized drain to source to On resistance. In general, for power MOSFET’s structures comparison the specific On resistance on area is used. This paper uses a normalized gate perimeter of element pattern, as an alternative figure of merit for a different trench MOSFET structure comparison because it is proportional to channel width and to drain to source resistance. Advantages and drawbacks of proposed new power MOSFETs structures are described.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the International Student Scientific Conference Poster – 22/2018
ISBN
978-80-01-06428-3
ISSN
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e-ISSN
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Number of pages
67
Pages from-to
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Publisher name
Czech Technical University in Prague
Place of publication
Praha
Event location
Praha
Event date
May 10, 2018
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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