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Trench MOS Having Source with Waffle Patterns

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00321792" target="_blank" >RIV/68407700:21230/18:00321792 - isvavai.cz</a>

  • Result on the web

    <a href="http://radio.feld.cvut.cz/conf/poster/proceedings/Poster_2018/Section_EI/EI_051_Vacula.pdf" target="_blank" >http://radio.feld.cvut.cz/conf/poster/proceedings/Poster_2018/Section_EI/EI_051_Vacula.pdf</a>

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Trench MOS Having Source with Waffle Patterns

  • Original language description

    In power MOSFETs devices can be recognized trends to replace planar gate by trench gate structures. The power devices with planar gates are simplier to fabricate and have higher maturity than non-planar power MOSFETs. In contrast Trench MOSFETs have a better performance but are more complex to fabricate and due to this have lower maturity. Proposed paper describe two new trench MOSFET structures with different gate patterns with optimized drain to source to On resistance. In general, for power MOSFET’s structures comparison the specific On resistance on area is used. This paper uses a normalized gate perimeter of element pattern, as an alternative figure of merit for a different trench MOSFET structure comparison because it is proportional to channel width and to drain to source resistance. Advantages and drawbacks of proposed new power MOSFETs structures are described.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2018

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proceedings of the International Student Scientific Conference Poster – 22/2018

  • ISBN

    978-80-01-06428-3

  • ISSN

  • e-ISSN

  • Number of pages

    67

  • Pages from-to

  • Publisher name

    Czech Technical University in Prague

  • Place of publication

    Praha

  • Event location

    Praha

  • Event date

    May 10, 2018

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article