AlGaN/GaN high electron mobility transistors for high temperatures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00424328" target="_blank" >RIV/68378271:_____/13:00424328 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
AlGaN/GaN high electron mobility transistors for high temperatures
Original language description
This work deals with design, technology and characterization of high temperature stable AlGaN/GaN based high electron mobility transistors (HEMTs) able to work in harsh environments. The originality of the concept proposal consists in research of new (a)progressive thin layers based on metal oxides and/or their combinations for Schottky gate electrodes, (b) metal stacks with improved surface morphology for ohmic contacts with low specific contact resistivity values and (c) possibilities of hybrid integration of the piezoelectric AlGaN/GaN material system with diamond layers in order to improve the heat dissipation in the channel of the HEMTs.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Perspektívne vákuové metódy a technológie (Perspective vacuum methods and technologies)
ISBN
978-80-971179-2-4
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
55-59
Publisher name
Slovenská vákuová spoločnosť
Place of publication
Bratislava
Event location
Štrbské Pleso
Event date
Oct 10, 2013
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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