Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 degrees C
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00499566" target="_blank" >RIV/68378271:_____/18:00499566 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.diamond.2018.09.014" target="_blank" >http://dx.doi.org/10.1016/j.diamond.2018.09.014</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.diamond.2018.09.014" target="_blank" >10.1016/j.diamond.2018.09.014</a>
Alternative languages
Result language
angličtina
Original language name
Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 degrees C
Original language description
We demonstrate the functionality of the diamond/SiNx-coated and the SiNx-coated AlGaN/GaN-based c-HEMTs in the temperature range from room temperature to 500 °C. The electrical measurements revealed increase of c-HEMTs' leakage currents at reversed gate voltages after diamond deposition, although the transistors remained operable in the tested temperature range. The increase of gate leakage currents and thus more negative pinch-off voltages were attributed to hydrogen penetrated towards AlGaN/GaN interface during the 60 h deposition process despite the SiNx protection. The influence of temperature rise on electronic properties of the diamond/SiNx-coated and the SiNx-coated AlGaN/GaN-based c-HEMTs is discussed.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
<a href="/en/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Preparation, modification and characterization of materials by radiation</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Diamond and Related Materials
ISSN
0925-9635
e-ISSN
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Volume of the periodical
89
Issue of the periodical within the volume
Oct
Country of publishing house
CH - SWITZERLAND
Number of pages
7
Pages from-to
266-272
UT code for WoS article
000449240000030
EID of the result in the Scopus database
2-s2.0-85053527734