Electron transport properties in high electron mobility transistor structures improved by V-Pit formation on the AlGaN/GaN interface

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00572001" target="_blank" >RIV/68378271:_____/23:00572001 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/23:10468618 RIV/68407700:21340/23:00367012
Result on the web
<a href="https://hdl.handle.net/11104/0342845" target="_blank" >https://hdl.handle.net/11104/0342845</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsami.3c00799" target="_blank" >10.1021/acsami.3c00799</a>

Result language
angličtina
Original language name
Electron transport properties in high electron mobility transistor structures improved by V-Pit formation on the AlGaN/GaN interface
Original language description
This work suggest new morphology for AlGaN/GaN interface which enhances electron mobility in 2D electron gas (2DEG) of HEMT structures. The widely used technology for preparation of GaN channel in AlGaN/GaN HEMT transistors is the growth at high temperature around 1000°C in hydrogen atmosphere. The main reason for these conditions is the aim to prepare atomically flat epitaxial surface for AlGaN/GaN interface and to achieve layer with the lowest possible carbon concentration. In this work we show, that smooth AlGaN/GaN interface is not necessary for high electron mobility in 2DEG. Surprisingly, when the high temperature GaN channel layer is replaced by the layer grown at temperature 870°C in nitrogen using TEGa as a precursor, the electron Hall mobility increases significantly. This unexpected behavior can be explained by a spatial separation of electrons by V-pits from the regions surrounding dislocation which contain increased concentration of point defects and impurities.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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