Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00569330" target="_blank" >RIV/68378271:_____/23:00569330 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/23:00367043
Result on the web
<a href="https://doi.org/10.1016/j.jcrysgro.2022.127061" target="_blank" >https://doi.org/10.1016/j.jcrysgro.2022.127061</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2022.127061" target="_blank" >10.1016/j.jcrysgro.2022.127061</a>
Alternative languages
Result language
angličtina
Original language name
Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters
Original language description
Although a lot of attention was devoted to different aspects of GaN HEMT structure such as buffer layer architecture, AlGaN barrier, surface passivation and dielectric choice, not much attention was paid to optimize the technology of GaN channel. We show in this work that by optimizing the channel technology the electron mobility can be significantly improved. We have studied the influence of technological parameters on transport properties on the series of GaN layers resembling a HEMT channel. We pay most attention to the layer growth using TEG precursor. The examined parameters were type of reactor atmosphere, growth temperature, growth rate influenced by precursor concentration and reactor pressure. Using optimized parameters for growth of a HEMT structure, we have succeeded in increasing the electron mobility in 2DEG by 30 %.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Crystal Growth
ISSN
0022-0248
e-ISSN
1873-5002
Volume of the periodical
605
Issue of the periodical within the volume
March
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
7
Pages from-to
127061
UT code for WoS article
000918695000001
EID of the result in the Scopus database
2-s2.0-85145252163