Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00543533" target="_blank" >RIV/68378271:_____/21:00543533 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/21:00353799
Result on the web
<a href="http://hdl.handle.net/11104/0320728" target="_blank" >http://hdl.handle.net/11104/0320728</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-6641/abfe9b" target="_blank" >10.1088/1361-6641/abfe9b</a>
Alternative languages
Result language
angličtina
Original language name
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design
Original language description
The influence of dislocation density on the transport properties of HEMT structures is reported. Experimental results, obtained on HEMT structures prepared in the same growth run on templates with different dislocation densities (DD), are compared. However, the direct comparison of structures is complicated, since parallel parasitic currents through deeper parts of the heterostructure were observed in samples with lower DD. To suppress this phenomenon, the addition of an AlGaN back barrier (BB) beneath 2DEG channel is proposed and optimized and the most suitable design based on both modeling and experimental results is suggested. Subsequently, the comparison of electron mobility in 2DEG for structures with AlGaN BB and different DD was possible. We show that DD lowering considerably increases the electron mobility in 2DEG. DD also has a significant influence on the Fermi level position in GaN. Reduction of DD can improve the performance of high-frequency GaN HEMT applications.n
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Semiconductor Science and Technology
ISSN
0268-1242
e-ISSN
1361-6641
Volume of the periodical
36
Issue of the periodical within the volume
7
Country of publishing house
GB - UNITED KINGDOM
Number of pages
9
Pages from-to
075016
UT code for WoS article
000661636300001
EID of the result in the Scopus database
2-s2.0-85109215033