All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00543533" target="_blank" >RIV/68378271:_____/21:00543533 - isvavai.cz</a>

  • Alternative codes found

    RIV/68407700:21340/21:00353799

  • Result on the web

    <a href="http://hdl.handle.net/11104/0320728" target="_blank" >http://hdl.handle.net/11104/0320728</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1088/1361-6641/abfe9b" target="_blank" >10.1088/1361-6641/abfe9b</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

  • Original language description

    The influence of dislocation density on the transport properties of HEMT structures is reported. Experimental results, obtained on HEMT structures prepared in the same growth run on templates with different dislocation densities (DD), are compared. However, the direct comparison of structures is complicated, since parallel parasitic currents through deeper parts of the heterostructure were observed in samples with lower DD. To suppress this phenomenon, the addition of an AlGaN back barrier (BB) beneath 2DEG channel is proposed and optimized and the most suitable design based on both modeling and experimental results is suggested. Subsequently, the comparison of electron mobility in 2DEG for structures with AlGaN BB and different DD was possible. We show that DD lowering considerably increases the electron mobility in 2DEG. DD also has a significant influence on the Fermi level position in GaN. Reduction of DD can improve the performance of high-frequency GaN HEMT applications.n

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2021

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Semiconductor Science and Technology

  • ISSN

    0268-1242

  • e-ISSN

    1361-6641

  • Volume of the periodical

    36

  • Issue of the periodical within the volume

    7

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    9

  • Pages from-to

    075016

  • UT code for WoS article

    000661636300001

  • EID of the result in the Scopus database

    2-s2.0-85109215033