Overview of GaN devices and transport properties of AlGaN/GaN HEMT structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00605247" target="_blank" >RIV/68378271:_____/23:00605247 - isvavai.cz</a>
Result on the web
<a href="https://kis.cvt.stuba.sk/arl-stu/en/detail-stu_us_cat-0106937-21st-Conference-of-Czech-and-Slovak-Physicists/?iset=1" target="_blank" >https://kis.cvt.stuba.sk/arl-stu/en/detail-stu_us_cat-0106937-21st-Conference-of-Czech-and-Slovak-Physicists/?iset=1</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Overview of GaN devices and transport properties of AlGaN/GaN HEMT structures
Original language description
All our results support our expectation that a suitably designed AlGaN back barrier can improve HEMT parameters. The best results were for an AlxGa1-xN BB, with x in the range of 0.07-0.15, Back Barrier thickness of 17 nm and a GaN channel layer thickness > 140 nm. For structures prepared on HDD buffer, parallel currents through deeper parts of the heterostructure were not detected. We did not observe strong influence of BB parameters on transport properties of samples prepared on HDD templates. Our results suggest that reduction of dislocation density increases electron mobility in 2DEG, which is beneficial for GaN HEMT HF applications. Since scattering on dislocations was excluded as a significant scattering mechanism in 2DEG, other mechanisms, such as scattering on ionized impurities surrounding dislocations or the influence of the interface morphology, may be responsible for lowering the electron mobility in structures with a high dislocation density.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů