Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00186056" target="_blank" >RIV/68407700:21230/11:00186056 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.sna.2011.09.028" target="_blank" >http://dx.doi.org/10.1016/j.sna.2011.09.028</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.sna.2011.09.028" target="_blank" >10.1016/j.sna.2011.09.028</a>
Alternative languages
Result language
angličtina
Original language name
Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor
Original language description
We report on a piezoelectric response investigation of AlGaN/GaN circular high electron mobility transistor (C-HEMT) based ring gate capacitor as a new stress sensor device to be potentially applied for dynamic high-pressure sensing. A ring gate capacitor of C-HEMT with an additional ZnO gate interfacial layer was used to measure the changes in the piezoelectric charge induced directly by the variation of piezoelectric polarization of both gate piezoelectric layers (AlGaN, ZnO) for harmonic loading at different excitation frequences. Our experimental results show that about 10 nm thick piezoelectric ZnO layer grown on ring gate/AlGaN interface of C-HEMT can yield almost a 60% increase in the piezoelectric detection sensitivity of the device due to itshigher piezoelectric coefficient.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Sensors and Actuators
ISSN
0924-4247
e-ISSN
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Volume of the periodical
2011
Issue of the periodical within the volume
172
Country of publishing house
GB - UNITED KINGDOM
Number of pages
6
Pages from-to
386-391
UT code for WoS article
000300026600005
EID of the result in the Scopus database
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