Piezoelectric response of AlGaN/GaN-based circular-HEMT structures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00186058" target="_blank" >RIV/68407700:21230/11:00186058 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.mee.2010.12.013" target="_blank" >http://dx.doi.org/10.1016/j.mee.2010.12.013</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mee.2010.12.013" target="_blank" >10.1016/j.mee.2010.12.013</a>

Result language
angličtina
Original language name
Piezoelectric response of AlGaN/GaN-based circular-HEMT structures
Original language description
This papers reports, for the first time, on a piezoelectric response investigation of AlGaN/GaN-based circular high electron mobility transistor (C-HEMT) structures, which can be potentially applied in new devices for dynamic pressure and stress sensing.We present the processing technology and a piezoelectric performance analysis of the C-HEMT devices. The analysis obtained experimentally is compared with the results of electro-mechanical simulation. The measurements and simulations revealed a good linearity in the piezoelectric response and excellent stress detection sensitivity that is independent from the frequency range measured.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Project
<a href="/en/project/GA102%2F09%2F1601" target="_blank" >GA102/09/1601: Intelligent micro and nano structures for microsensors realized with support of nanotechnology</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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