Piezoelectric response of AlGaN/GaN based circular-HEMT structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00174172" target="_blank" >RIV/68407700:21230/10:00174172 - isvavai.cz</a>
Result on the web
<a href="http://www.mne2010.org" target="_blank" >http://www.mne2010.org</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Piezoelectric response of AlGaN/GaN based circular-HEMT structures
Original language description
In this work we have proposed for the first time a circular-HEMT (C-HEMT) device for external pressure and stress sensing. There are some advantages of this structure comparing to that of the conventional rectangular HEMT. First of all there is no ""MESA""- etching step needed to define C-HEMT, so the continuity of the top AlGaN barrier layer is not broken and therefore, no partial relaxation of the applied bending stress is there observed.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů