V-pits formation in InGaN/GaN: influence of threading dislocations and indium content

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00556260" target="_blank" >RIV/68378271:_____/22:00556260 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/22:10443318 RIV/00216224:14310/22:00128729
Result on the web
<a href="https://doi.org/10.1088/1361-6463/ac5c1a" target="_blank" >https://doi.org/10.1088/1361-6463/ac5c1a</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-6463/ac5c1a" target="_blank" >10.1088/1361-6463/ac5c1a</a>

Result language
angličtina
Original language name
V-pits formation in InGaN/GaN: influence of threading dislocations and indium content
Original language description
Two sets of InGaN/GaN MOVPE-grown samples were studied by high-resolution x-ray diffraction techniques together with statistical analysis of atomic force microscope images in order to determine the impact of In concentration and threading dislocations (TDs) density on the V-pit formation. It was shown that in our samples, the density of V-pits in the epilayer matched the TD density with a screw component in the substrate. Pure edge TDs do not affect the V-pit density. The In concentration influences the size of the V-pits, but not their density.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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