Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F21%3A10426552" target="_blank" >RIV/00216208:11320/21:10426552 - isvavai.cz</a>
Alternative codes found
RIV/00216224:14310/21:00121246
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=ima-rI9R2y" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=ima-rI9R2y</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1107/S1600576720014764" target="_blank" >10.1107/S1600576720014764</a>
Alternative languages
Result language
angličtina
Original language name
Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations
Original language description
V-pit defects in InGaN/GaN were studied by numerical simulations of the strain field and X-ray diffraction (XRD) reciprocal space maps. The results were compared with XRD and scanning electron microscopy (SEM) experimental data collected from a series of samples grown by metal-organic vapor phase epitaxy. Analysis of the principal strains and their directions in the vicinity of V-pits explains the pseudomorphic position of the InGaN epilayer peak observed by X-ray diffraction reciprocal space mapping. The top part of the InGaN layer involving V-pits relieves the strain by elastic relaxation. Plastic relaxation by misfit dislocations is not observed. The creation of the V-pits appears to be a sufficient mechanism for strain relaxation in InGaN/GaN epilayers.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Crystallography
ISSN
0021-8898
e-ISSN
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Volume of the periodical
54
Issue of the periodical within the volume
Únor
Country of publishing house
DK - DENMARK
Number of pages
10
Pages from-to
62-71
UT code for WoS article
000613988600008
EID of the result in the Scopus database
2-s2.0-85110579005