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Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F21%3A10426552" target="_blank" >RIV/00216208:11320/21:10426552 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216224:14310/21:00121246

  • Result on the web

    <a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=ima-rI9R2y" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=ima-rI9R2y</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1107/S1600576720014764" target="_blank" >10.1107/S1600576720014764</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations

  • Original language description

    V-pit defects in InGaN/GaN were studied by numerical simulations of the strain field and X-ray diffraction (XRD) reciprocal space maps. The results were compared with XRD and scanning electron microscopy (SEM) experimental data collected from a series of samples grown by metal-organic vapor phase epitaxy. Analysis of the principal strains and their directions in the vicinity of V-pits explains the pseudomorphic position of the InGaN epilayer peak observed by X-ray diffraction reciprocal space mapping. The top part of the InGaN layer involving V-pits relieves the strain by elastic relaxation. Plastic relaxation by misfit dislocations is not observed. The creation of the V-pits appears to be a sufficient mechanism for strain relaxation in InGaN/GaN epilayers.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2021

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Applied Crystallography

  • ISSN

    0021-8898

  • e-ISSN

  • Volume of the periodical

    54

  • Issue of the periodical within the volume

    Únor

  • Country of publishing house

    DK - DENMARK

  • Number of pages

    10

  • Pages from-to

    62-71

  • UT code for WoS article

    000613988600008

  • EID of the result in the Scopus database

    2-s2.0-85110579005