Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F23%3A00576333" target="_blank" >RIV/68081723:_____/23:00576333 - isvavai.cz</a>

Alternative codes found

RIV/00216305:26620/23:PU149496

Result on the web

<a href="https://pubs.aip.org/aip/jap/article/134/14/145102/2916034/Porous-pseudo-substrates-for-InGaN-quantum-well" target="_blank" >https://pubs.aip.org/aip/jap/article/134/14/145102/2916034/Porous-pseudo-substrates-for-InGaN-quantum-well</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0165066" target="_blank" >10.1063/5.0165066</a>

Result language

angličtina

Original language name

Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation

Original language description

Strain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopt ing a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemicalnetching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. Thendegree of strain relaxation in MQWs was studied by x-ray reciprocal space mapping, which shows an increase of the in-plane lattice constantnwith the increase of etching voltage used in fabricating the pseudo-substrate. The reduced strain in the InGaN SL pseudo-substrate was dem onstrated to be transferable to InGaN MQWs grown on top of it, and the engineering of the degree of strain relaxation via porosificationnwas achieved. The highest relaxation degree of 44.7% was achieved in the sample with the porous InGaN SL template etched under thenhighest etching voltage. Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the com bination of atomic force and transmission electron microscopy. The increased porosity of the InGaN SL template and the newly formednsmall V-pits during QW growth are suggested as possible origins for the increased strain relaxation of InGaN MQWs.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/LM2018110" target="_blank" >LM2018110: CzechNanoLab research infrastructure</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2023

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

1089-7550

Volume of the periodical

134

Issue of the periodical within the volume

14

Country of publishing house

US - UNITED STATES

Number of pages

10

Pages from-to

145102

UT code for WoS article

001083993400005

EID of the result in the Scopus database

2-s2.0-85174829301