New chemical pathway for large-area deposition of doped diamond films by linear antenna microwave plasma chemical vapor deposition

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00558649" target="_blank" >RIV/68378271:_____/22:00558649 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.diamond.2022.109111" target="_blank" >https://doi.org/10.1016/j.diamond.2022.109111</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.diamond.2022.109111" target="_blank" >10.1016/j.diamond.2022.109111</a>

Result language
angličtina
Original language name
New chemical pathway for large-area deposition of doped diamond films by linear antenna microwave plasma chemical vapor deposition
Original language description
We present an implementation of a liquid-phase boron precursor trimethyl borate for large-area deposition of boron-doped diamond films by linear antenna microwave plasma CVD. Trimethyl borate vapors were used not only as a source of boron for doping but also as the only source of carbon and oxygen, while completely saturating the requirements for the growth of high-quality boron-doped diamond films. However, to allow for control over the doping level through maintaining the B/C and B/O ratios, carbon dioxide was employed as an additional source of carbon and oxygen. The film morphology was controllable from microcrystalline to ultrananocrystalline by changing the concentrations of trimethyl borate. Using this unique precursor system, we were able to grow diamond films with a doping level in range from 8 x 10e17 cm(-3) to 2 x 10e22 cm-3 and resistivity as low as 1.16 x 10e-2 omega.cm.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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