Effects of metal layers on chemical vapor deposition of diamond films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00564910" target="_blank" >RIV/68378271:_____/22:00564910 - isvavai.cz</a>

Result on the web

<a href="https://hdl.handle.net/11104/0336490" target="_blank" >https://hdl.handle.net/11104/0336490</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.2478/jee-2022-0047" target="_blank" >10.2478/jee-2022-0047</a>

Result language

angličtina

Original language name

Effects of metal layers on chemical vapor deposition of diamond films

Original language description

Here, we present the influence of thin metal (Ni, Ir, Au) layers on diamond growth by MWCVD employing two different concepts. In the first concept, a flat substrate (GaN) was initially coated with a thin metal layer, then exposed to the MWCVD process. In the second concept, the diamond film was firstly formed, then it was overcoated with the metal layer and finally, once again exposed to the diamond MWCVD. It was confirmed that the Ni thin films (15 nm) hinder the formation of diamond crystals resulting in the formation of an amorphous carbon layer. Contrary to this finding, the Ir layer resulted in a successful overgrowth by the fully closed diamond film. However, by employing concept 2 (ie hybrid diamond/metal/diamond composite), the thin Ir layer was found to be unstable and transferred into the isolated clusters, which were overgrown by the diamond film. Using the Au/Ir (30/15 nm) bilayer system stabilized the metallization and no diamond growth was observed on the metal layer.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

20201 - Electrical and electronic engineering

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2022

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Electrical Engineering - Elektrotechnický časopis

ISSN

1335-3632

e-ISSN

1339-309X

Volume of the periodical

73

Issue of the periodical within the volume

5

Country of publishing house

SK - SLOVAKIA

Number of pages

5

Pages from-to

350-354

UT code for WoS article

000883793600007

EID of the result in the Scopus database

2-s2.0-85143055399