Selective area deposition of diamond films on AlGaN/GaN heterostructures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00438857" target="_blank" >RIV/68378271:_____/14:00438857 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssb.201451167" target="_blank" >http://dx.doi.org/10.1002/pssb.201451167</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssb.201451167" target="_blank" >10.1002/pssb.201451167</a>
Alternative languages
Result language
angličtina
Original language name
Selective area deposition of diamond films on AlGaN/GaN heterostructures
Original language description
Here we present selective area diamond deposition on AlGaN/GaN layers focusing on the elimination of surface and metal contact damage (Ni, NiO, Ir,and IrO2) and suppressing the spontaneous nucleation of diamond. Metal contacts are important for further applications such as diamond-coated GaN based electronic devices. The growth of diamond films was performed by microwave chemical vapor deposition in different gas mixtures with the addition of CO2 or N2 to CH4/H2. Adding CO2 resulted in polycrystalline (PCD), while adding N2 led to the formation of nanocrystalline diamond film (NCD). The diamond deposition was carried out using selective area nucleation in a three-layer sandwich structure (polymer/seeding layer/polymer), which avoided damage to the electrode and GaN surfaces from ultrasonic seeding by diamond particles. No protective layer was used on the GaN surface before diamond deposition, i.e.,diamond films were grown directly on the AlGaN/GaN heterostructures.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GP14-16549P" target="_blank" >GP14-16549P: Electronic Performance Enhancement of Diamond-GaN Hybrid Structures Using Engineered Strains</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi B-Basic Solid State Physics
ISSN
0370-1972
e-ISSN
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Volume of the periodical
250
Issue of the periodical within the volume
12
Country of publishing house
DE - GERMANY
Number of pages
7
Pages from-to
2574-2580
UT code for WoS article
000345830900042
EID of the result in the Scopus database
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