Influence of diamond CVD growth conditions and interlayer material on diamond/GaN interface
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00450412" target="_blank" >RIV/68378271:_____/15:00450412 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.982" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.982</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.982" target="_blank" >10.4028/www.scientific.net/MSF.821-823.982</a>
Alternative languages
Result language
angličtina
Original language name
Influence of diamond CVD growth conditions and interlayer material on diamond/GaN interface
Original language description
In this study we present the diamond deposition on AlGaN/GaN substrates focusing on the quality of the diamond/GaN interface. The growth of diamond films was performed using microwave chemical vapour deposition system in different gas mixtures: standardCH4/H2 (at low and high ratio of CH4 to H2) and addition of CO2 to CH4/H2 gas chemistry. The diamond films were grown directly on GaN films either without or with thin interlayer. As interlayer, 100 nm thick Si3N4 was used. Surprisingly, in the case of standard CH4/H2 gas mixture, no diamond film was observed on the GaN with SiNx interlayer, while adding of CO2 resulted in diamond film formation on both samples with and without SiNx interlayer. Moreover, adding of CO2 led to higher growth rate. The morphology of diamond films and the quality of the diamond/GaN interface was investigated from the cross-section images by SEM and the chemical character (i.e. sp3 versus sp2 carbon bonds) was measured by Raman spectroscopy.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GP14-16549P" target="_blank" >GP14-16549P: Electronic Performance Enhancement of Diamond-GaN Hybrid Structures Using Engineered Strains</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Silicon Carbide and Related Materials 2014
ISBN
978-3-03835-478-9
ISSN
1662-9752
e-ISSN
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Number of pages
4
Pages from-to
982-985
Publisher name
Trans Tech Publications
Place of publication
Pfaffikon
Event location
Grenoble
Event date
Sep 21, 2014
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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