AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00436952" target="_blank" >RIV/68378271:_____/14:00436952 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures
Original language description
In this work, we present an application of NCD layers as backside cooling for AlGaN/GaN heterostructures grown on Si substrates. In this case, diamond nucleation is the most limiting technological step due to low mechanical stability of GaN membranes. Weobserved that standard nucleation techniques (ultrasonic seeding or bias enhanced nucleation) caused cracking of the membranes or not appropriate nucleation efficiency in the Z-depth of structures. Therefore we implemented PVA polymer consisting of diamond powder as seeding composite which resulted in a successful growth of diamond thin film.
Czech name
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Czech description
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Project
<a href="/en/project/GP14-16549P" target="_blank" >GP14-16549P: Electronic Performance Enhancement of Diamond-GaN Hybrid Structures Using Engineered Strains</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems
ISBN
978-1-4799-5474-2
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
263-266
Publisher name
Slovak University of Technology
Place of publication
Bratislava
Event location
Smolenice
Event date
Oct 20, 2014
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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