Diamond-coated three-dimensional GaN micromembranes: effect of nucleation and deposition techniques
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00454749" target="_blank" >RIV/68378271:_____/15:00454749 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssb.201552227" target="_blank" >http://dx.doi.org/10.1002/pssb.201552227</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssb.201552227" target="_blank" >10.1002/pssb.201552227</a>
Alternative languages
Result language
angličtina
Original language name
Diamond-coated three-dimensional GaN micromembranes: effect of nucleation and deposition techniques
Original language description
In this work, we present technological issues on deposition of diamond films as a backside heat spreader for GaN membranes. We compared three nucleation techniques including standard ultrasonic seeding by diamond powder (DP), drop off with DP in solutionand polymer based nucleation by PVA composite. The diamond growth was performed complementary by HFCVD or MWCVD. We found that standard nucleation techniques resulted in damaging of GaN membranes, or low nucleation efficiency in the Z-depth of the structures. Implementation of a novel nucleation method with PVA polymer composite led to coating of both bottom and top part of membrane including side walls. The coverage homogeneity was evaluated by scanning electron microscopy and Raman spectroscopy. Theobtained results indicate that the efficiency (and/or nucleation density) of the polymer-based technique is comparable with standard ultrasonic seeding and could be used preferable for nucleation of soft and fragile substrates.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GP14-16549P" target="_blank" >GP14-16549P: Electronic Performance Enhancement of Diamond-GaN Hybrid Structures Using Engineered Strains</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi B-Basic Solid State Physics
ISSN
0370-1972
e-ISSN
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Volume of the periodical
252
Issue of the periodical within the volume
11
Country of publishing house
DE - GERMANY
Number of pages
6
Pages from-to
2585-2590
UT code for WoS article
000364690400039
EID of the result in the Scopus database
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