Thermally-induced stress in diamond-coated GaN membranes: influence of front- or back-side diamond deposition

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00487097" target="_blank" >RIV/68378271:_____/17:00487097 - isvavai.cz</a>
Result on the web
<a href="http://www.sssj.org/isss8/timetable.html#poster-program" target="_blank" >http://www.sssj.org/isss8/timetable.html#poster-program</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Thermally-induced stress in diamond-coated GaN membranes: influence of front- or back-side diamond deposition
Original language description
Here, we present technological issues in the deposition of diamond films as a heat spreader for GaN membranes. GaN membranes were fabricated by deep reactive ion etching of Si. Deposition of diamond on the “front” or “back-side” of GaN were performed by MWCVD. The thickness of deposited diamond films were 0.4, 3.5 and 12 um. The diamond/GaN heterostructures were studied in terms of thermally-induced stress analysis by Raman spectroscopy and FEM simulations. The stress was evaluated from the Raman shift of the diamond or GaN peak position within the temperature range from 50 to 400°C. The shift was measured at two positions: at the center and edge of the membrane. While in the case of bottom-side deposition the grown diamond layer was relatively homogeneous and covered the whole 3D hole (i.e. including its sidewalls), in the case of top-side deposition a thicker diamond layer was grown at the membrane center.n
Czech name
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Czech description
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Project
<a href="/en/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Preparation, modification and characterization of materials by radiation</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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