Front-side diamond deposition on the GaN membranes

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00540751" target="_blank" >RIV/68378271:_____/20:00540751 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Front-side diamond deposition on the GaN membranes

Original language description

We present technological issues in the deposition of diamond films on the GaN membranes. Many wrinkles and the thicker diamond layer were observed at the membrane centre and poor quality diamond outside the membrane area. The deflection of the membranes were analyzed by a bulging method using white light interferometry. The membrane bending was discussed in the terms of temperature gradient and mismatch of thermal expansion coefficients of materials. Optimized technological procedure was proposed to obtain both-side diamond-coated GaN membranes with minimized effect of wrinkling and induced residual stress.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2020

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings of the 13th International Conference on Advanced Semiconductor Devices And Microsystems

ISBN

978-1-7281-9776-0

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

42-45

Publisher name

IEEE

Place of publication

New York

Event location

Smolenice

Event date

Oct 11, 2020

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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