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Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00464052" target="_blank" >RIV/68378271:_____/16:00464052 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1016/j.matdes.2016.06.006" target="_blank" >http://dx.doi.org/10.1016/j.matdes.2016.06.006</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.matdes.2016.06.006" target="_blank" >10.1016/j.matdes.2016.06.006</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

  • Original language description

    In this study, we present a methodology for evaluation of thermally induced stress in diamond microstructures. The diamond strips (2 mm in width and 0.78 or 2.8 μm in thickness) were selectively grown on AlGaN/GaN heterostructures. The stress was evaluated from the Raman shift of the diamond peak position within the temperature range from 50 to 400°C. The shift was measured at two positions, i.e. at center and edge of the strip. We observed that for temperature increase from 50 to 400°C the difference between stresses evaluated at the center and edge of diamond strip (stress) decreases from 0.27 to 0.18 GPa and from 0.32 to 0.1 GPa for the thinner and thicker diamond films, respectively. Experimental data were compared with FEM simulations. The simulations fitted well to experimental data and confirmed that the stress difference between the center and edge of diamond strip was caused by thermal stress component.n

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GP14-16549P" target="_blank" >GP14-16549P: Electronic Performance Enhancement of Diamond-GaN Hybrid Structures Using Engineered Strains</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Materials and Design

  • ISSN

    0264-1275

  • e-ISSN

  • Volume of the periodical

    106

  • Issue of the periodical within the volume

    Sep

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    8

  • Pages from-to

    305-312

  • UT code for WoS article

    000381528900035

  • EID of the result in the Scopus database

    2-s2.0-84989924930