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Investigation of residual stress in structured diamond films grown on silicon

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00449460" target="_blank" >RIV/68378271:_____/15:00449460 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1016/j.tsf.2015.07.022" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2015.07.022</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.tsf.2015.07.022" target="_blank" >10.1016/j.tsf.2015.07.022</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Investigation of residual stress in structured diamond films grown on silicon

  • Original language description

    Thin diamond strips on Si with the thickness of approx. 0.5 and 1 ?m and two different widths (100 and 200 ?m) were fabricated in two different ways: i) selective ion etching of the continuous diamond films and ii) selective area diamond growth. The stress induced in the films was measured by Raman spectroscopy. The measured values were in the range from -0.7 to -0.1 GPa. It was found that the stress was compressive and independent of the film thickness. In the films deposited at 950 K, more compressivestress than at 1100 K was measured. The thermal part of the stress as a consequence of heterostructure cooling from high deposition temperature down to room temperature was calculated by Finite Element Method (FEM) simulations and compared with the measurement.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GP14-16549P" target="_blank" >GP14-16549P: Electronic Performance Enhancement of Diamond-GaN Hybrid Structures Using Engineered Strains</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Thin Solid Films

  • ISSN

    0040-6090

  • e-ISSN

  • Volume of the periodical

    589

  • Issue of the periodical within the volume

    Aug

  • Country of publishing house

    CH - SWITZERLAND

  • Number of pages

    7

  • Pages from-to

    857-863

  • UT code for WoS article

    000360320000135

  • EID of the result in the Scopus database

    2-s2.0-84940047315