Investigation of residual stress in structured diamond films grown on silicon
Result description
Thin diamond strips on Si with the thickness of approx. 0.5 and 1 ?m and two different widths (100 and 200 ?m) were fabricated in two different ways: i) selective ion etching of the continuous diamond films and ii) selective area diamond growth. The stress induced in the films was measured by Raman spectroscopy. The measured values were in the range from -0.7 to -0.1 GPa. It was found that the stress was compressive and independent of the film thickness. In the films deposited at 950 K, more compressivestress than at 1100 K was measured. The thermal part of the stress as a consequence of heterostructure cooling from high deposition temperature down to room temperature was calculated by Finite Element Method (FEM) simulations and compared with the measurement.
Keywords
CVD diamondthermal stressselective area depositionFEM simulations
The result's identifiers
Result code in IS VaVaI
Result on the web
DOI - Digital Object Identifier
Alternative languages
Result language
angličtina
Original language name
Investigation of residual stress in structured diamond films grown on silicon
Original language description
Thin diamond strips on Si with the thickness of approx. 0.5 and 1 ?m and two different widths (100 and 200 ?m) were fabricated in two different ways: i) selective ion etching of the continuous diamond films and ii) selective area diamond growth. The stress induced in the films was measured by Raman spectroscopy. The measured values were in the range from -0.7 to -0.1 GPa. It was found that the stress was compressive and independent of the film thickness. In the films deposited at 950 K, more compressivestress than at 1100 K was measured. The thermal part of the stress as a consequence of heterostructure cooling from high deposition temperature down to room temperature was calculated by Finite Element Method (FEM) simulations and compared with the measurement.
Czech name
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Czech description
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Classification
Type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
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Volume of the periodical
589
Issue of the periodical within the volume
Aug
Country of publishing house
CH - SWITZERLAND
Number of pages
7
Pages from-to
857-863
UT code for WoS article
000360320000135
EID of the result in the Scopus database
2-s2.0-84940047315
Basic information
Result type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP
BM - Solid-state physics and magnetism
Year of implementation
2015