Modeling of Thermal Stress Induced During the Diamond-Coating of AlGaN/GaN High Electron Mobility Transistors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F13%3A00211683" target="_blank" >RIV/68407700:21340/13:00211683 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Modeling of Thermal Stress Induced During the Diamond-Coating of AlGaN/GaN High Electron Mobility Transistors
Original language description
A thermally-induced stress during the microwave-plasma-enhanced chemical vapor deposition of a thin nanocrystalline diamond (NCD) films on GaN/AlGaN heterostructures and their subsequent cooling off was simulated in the CFD-ACE+ software. The samples intended to use in HEMT (High Electron Mobility Transistor) devices were prepared by two different methods: (a) continuous diamond film deposition followed by selective etching and (b) the selective growth of patterned diamond films. The finite-element method on the axisymmetric geometry was used to calculate the thermal deformations of these two types of samples. The qualitative dependencies of the deformations on the diamond film thickness and the substrate material were found. The lowest stresses were found on the SiC substrate, thanks to its low thermal expansion and high Young modulus. The simulation results of the structure with continuous and selectively-grown patterned film were compared.
Czech name
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Czech description
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Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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