Modeling of thermal stress induced during the diamond-coating of ALGaN/GaN high electron mobility transistors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00420780" target="_blank" >RIV/68378271:_____/13:00420780 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/13:00425306
Result on the web
<a href="http://dx.doi.org/10.1166/asem.2013.1324" target="_blank" >http://dx.doi.org/10.1166/asem.2013.1324</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1166/asem.2013.1324" target="_blank" >10.1166/asem.2013.1324</a>

Result language
angličtina
Original language name
Modeling of thermal stress induced during the diamond-coating of ALGaN/GaN high electron mobility transistors
Original language description
A thermally-induced stress during the microwave-plasma-enhanced chemical vapor deposition of a thin nanocrystalline diamond (NCD) films on GaN/AlGaN heterostructures and their subsequent cooling off was simulated in the CFD-ACE+ software. The samples intended to use in HEMT (High Electron Mobility Transistor) devices were prepared by two different methods: (a) the continuous diamond film deposition followed by selective etching, and (b) the selective growth of patterned diamond films. The simulation results of structure of these two types of samples were compared.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Preparation, modification and characterization of materials by radiation</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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