Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00546598" target="_blank" >RIV/68378271:_____/21:00546598 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1016/j.mseb.2021.115434" target="_blank" >https://doi.org/10.1016/j.mseb.2021.115434</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mseb.2021.115434" target="_blank" >10.1016/j.mseb.2021.115434</a>

Result language

angličtina

Original language name

Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements

Original language description

The effect of silicon oxynitride (SiON) layer on the thermally-induced stress of diamond-coated AlGaN/GaN heterostructures was studied by Raman and SIMS spectroscopy. Diamond films (0.8 or 2.8 µm in thickness) were grown by MWCVD on selected areas of AlGaN/GaN/Si substrates with SiON interlayer. The stress in diamond became tensile for the thinner strip in the range of 0÷0.5 GPa and compressive for the thicker strip in the range of -0.6 ÷ -0.1 GPa both measured at temperatures ranging from 50 to 400°C. The applied SiON interlayer positively influenced the induced stress (Δstress decreased by about 0.14 GPa compared to the sample without SiON) independently on the thickness of the diamond film. SIMS depth profiling was applied to analyse the influence of diamond CVD on the AlGaN/GaN interface of SiON passivated samples. As observed, the hydrogen and carbon atoms were trapped in the SiON which acted as a stop layer.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

20506 - Coating and films

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2021

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Materials Science and Engineering B-Advanced Functional Solid-State Materials

ISSN

0921-5107

e-ISSN

1873-4944

Volume of the periodical

273

Issue of the periodical within the volume

Nov.

Country of publishing house

CH - SWITZERLAND

Number of pages

6

Pages from-to

115434

UT code for WoS article

000702850700008

EID of the result in the Scopus database

2-s2.0-85114516498