Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf0.5Zr0.5O2/TiN device
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00571425" target="_blank" >RIV/68378271:_____/22:00571425 - isvavai.cz</a>
Result on the web
<a href="https://hdl.handle.net/11104/0342651" target="_blank" >https://hdl.handle.net/11104/0342651</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/2632-959X/ac5be5" target="_blank" >10.1088/2632-959X/ac5be5</a>
Alternative languages
Result language
angličtina
Original language name
Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf0.5Zr0.5O2/TiN device
Original language description
Hf0.5 Zr 0.5 O 2 (HZO) is an appropriate material for the back-end-of-line (BEOL) process in fabricating ferroelectric TiN/HZO/TiN devices because of its excellent conformality on 3D nanostructures and a suitable crystallization temperature ( 350 °C–400 °C). However, in the semiconductor industry, the deposition temperature of TiN is usually higher than 400 °C. Therefore, it is necessary to study the ferroelectric properties of TiN/HZO/TiN devices when the deposition temperature of the TiN top electrode is higher than the HZO film crystallization temperature. In this study, 10-nm-thick TiN top electrodes were deposited at various temperatures on the HZO thin film to investigate the impact of the TiN deposition temperature on the structural features and ferroelectric properties of TiN/HZO/TiN capacitors. Only the sample capped with a TiN top electrode deposited at 400 °C showed ferroelectric properties without subsequent annealing (in situ crystallization).
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nano Express
ISSN
2632-959X
e-ISSN
2632-959X
Volume of the periodical
3
Issue of the periodical within the volume
1
Country of publishing house
GB - UNITED KINGDOM
Number of pages
11
Pages from-to
015004
UT code for WoS article
000899232700001
EID of the result in the Scopus database
2-s2.0-85129313902