Impact of Ge doping on MOVPE grown InGaN layers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00570390" target="_blank" >RIV/68378271:_____/23:00570390 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/23:00367044 RIV/46747885:24220/23:00012280 RIV/00216208:11320/23:10458524
Result on the web
<a href="https://doi.org/10.1016/j.jcrysgro.2022.127043" target="_blank" >https://doi.org/10.1016/j.jcrysgro.2022.127043</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2022.127043" target="_blank" >10.1016/j.jcrysgro.2022.127043</a>

Result language
angličtina
Original language name
Impact of Ge doping on MOVPE grown InGaN layers
Original language description
The impact of Ge doping on InGaN layers grown with the Metal Organic Vapor Phase Epitaxy technique is investigated, with the main focus on the influence of GeH4 flow and Ga/III ratio on the luminescence, electrical and structural properties of InGaN:Ge layers. It is shown that at doping levels above 1019 cm-3 an increase in GeH4 flow results in a decrease in the In content and lower concentration of free carrier density in InGaN layers. On the contrary, the change of Ga/III ratio has no influence on the luminescence and structural properties. An unintentional Ge doping of InGaN layers due to the Ge memory effect or back diffusion is discussed.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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