Tiling the silicon for added functionality: PLD growth of highly crystalline STO and PZT on graphene oxide-buffered silicon surface
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00570943" target="_blank" >RIV/68378271:_____/23:00570943 - isvavai.cz</a>
Result on the web
<a href="https://hdl.handle.net/11104/0342281" target="_blank" >https://hdl.handle.net/11104/0342281</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsami.2c17351" target="_blank" >10.1021/acsami.2c17351</a>
Alternative languages
Result language
angličtina
Original language name
Tiling the silicon for added functionality: PLD growth of highly crystalline STO and PZT on graphene oxide-buffered silicon surface
Original language description
Besides acting as a seed layer for van der Waals epitaxy, the 2D materials have enabled wetting transparency in which the potential field of the substrate, is still capable of imposing epitaxial overgrowth. Preservation of the quality of 2D materials during and after their transfer to a substrate of interest is crucial. We show that the traditional epitaxy and wet chemistry a hybrid approach can offers a unique perspective for the integration of functional oxides with a silicon platform. It is based on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudosubstrate suitable for further overgrowth of functional oxides, such as PbZr1−xTixO3 (PZT). This approach may provide new routes for direct and “remote” epitaxy or layer-transfer techniques of dissimilar material systems.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GF21-20110K" target="_blank" >GF21-20110K: Semiconductor - dielectric heterostructures for photoelectrochemical hydrogen evolution</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Applied Materials and Interfaces
ISSN
1944-8244
e-ISSN
1944-8252
Volume of the periodical
15
Issue of the periodical within the volume
4
Country of publishing house
US - UNITED STATES
Number of pages
11
Pages from-to
6058-6068
UT code for WoS article
000920456500001
EID of the result in the Scopus database
2-s2.0-85146559779