Robust SrTiO3 passivation of silicon photocathode by reduced graphene oxide for solar water splitting

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00576644" target="_blank" >RIV/68378271:_____/23:00576644 - isvavai.cz</a>

Result on the web

<a href="https://hdl.handle.net/11104/0349481" target="_blank" >https://hdl.handle.net/11104/0349481</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsami.3c07747" target="_blank" >10.1021/acsami.3c07747</a>

Result language

angličtina

Original language name

Robust SrTiO3 passivation of silicon photocathode by reduced graphene oxide for solar water splitting

Original language description

Development of a robust photocathode using lowcost and high-performing materials to produce clean fuel hydrogen has remained challenging since the semiconductor substrate is easily susceptible to (photo)corrosion under photoelectrochemical (PEC) operational conditions. A protective layer over the substrate to simultaneously provide corrosion resistance and maintain efficient charge transfer across the device is therefore needed. To this end, in the present work, we utilized pulsed laser deposition (PLD) to prepare a high-quality SrTiO3 (STO) layer to passivate the p-Si substrate using a buffer layer of reduced graphene oxide (rGO). The stability tests demonstrated the soundness of the epitaxial STO layer in passivating Si against corrosion. This study provided a facile approach for preparing a robust protection layer over a photoelectrode substrate in realizing an efficient and, at the same time, durable PEC device.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/GF21-20110K" target="_blank" >GF21-20110K: Semiconductor - dielectric heterostructures for photoelectrochemical hydrogen evolution</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2023

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

ACS Applied Materials and Interfaces

ISSN

1944-8244

e-ISSN

1944-8252

Volume of the periodical

15

Issue of the periodical within the volume

37

Country of publishing house

US - UNITED STATES

Number of pages

11

Pages from-to

44482-44492

UT code for WoS article

001066517500001

EID of the result in the Scopus database

2-s2.0-85171900524