Nanocrystalline Boron-Doped Diamond as a Corrosion-Resistant Anode for Water Oxidation via Si Photoelectrodes
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F18%3A00357355" target="_blank" >RIV/68407700:21460/18:00357355 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/18:00493543 RIV/61388955:_____/18:00493543 RIV/26722445:_____/18:N0000055
Result on the web
<a href="https://doi.org/10.1021/acsami.8b08714" target="_blank" >https://doi.org/10.1021/acsami.8b08714</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsami.8b08714" target="_blank" >10.1021/acsami.8b08714</a>
Alternative languages
Result language
angličtina
Original language name
Nanocrystalline Boron-Doped Diamond as a Corrosion-Resistant Anode for Water Oxidation via Si Photoelectrodes
Original language description
Due to its high sensitivity to corrosion, the use of Si in direct photoelectrochemical (PEC) water-splitting systems that convert solar energy into chemical fuels has been greatly limited. Therefore, the development of low-cost materials resistant to corrosion under oxidizing conditions is an important goal toward a suitable protection of otherwise unstable semiconductors used in PEC cells. Here, we report on the development of a protective coating based on thin and electrically conductive nanocrystalline boron-doped diamond (BDD) layers. We found that BDD layers protect the underlying Si photoelectrodes over a wide pH range (1-14) in aqueous electrolyte solutions. A BDD layer maintains an efficient charge carrier transfer from the underlying silicon to the electrolyte solution. SiIBDD photo electrodes show no sign of performance degradation after a continuous PEC treatment in neutral, acidic, and basic electrolytes. The deposition of a cobalt phosphate (CoPi) oxygen evolution catalyst onto the BDD layer significantly reduces the overpotential for water oxidation, demonstrating the ability of BDD layers to substitute the transparent conductive oxide coatings, such as indium tin oxide (ITO) and fluorine-doped tin oxide (FTO), frequently used as protective layers in Si photoelectrodes.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
—
Continuities
V - Vyzkumna aktivita podporovana z jinych verejnych zdroju
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Applied Materials & Interfaces
ISSN
1944-8244
e-ISSN
1944-8252
Volume of the periodical
10
Issue of the periodical within the volume
35
Country of publishing house
US - UNITED STATES
Number of pages
13
Pages from-to
29552-29564
UT code for WoS article
000444355700036
EID of the result in the Scopus database
2-s2.0-85052434731