Influence of SnBi antisite defects on the electronic band structure and transport properties of the layered chalcogenide semiconductor SnBi2Te4
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00601629" target="_blank" >RIV/68378271:_____/24:00601629 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1021/acs.jpcc.4c06097" target="_blank" >https://doi.org/10.1021/acs.jpcc.4c06097</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.jpcc.4c06097" target="_blank" >10.1021/acs.jpcc.4c06097</a>
Alternative languages
Result language
angličtina
Original language name
Influence of SnBi antisite defects on the electronic band structure and transport properties of the layered chalcogenide semiconductor SnBi2Te4
Original language description
Narrow-band gap, layered chalcogenide semiconductors provide a rich area of research for designing highly efficient thermoelectric materials for near-room-temperature applications due to their intrinsically low lattice thermal conductivity and multivalley electronic band structure. Here, we report on a comprehensive theoretical and experimental investigation of the thermoelectric properties of one member of this class, SnBi2Te4, in the temperature range of 5–700 K. Transport property measurements combined with electronic band structure calculations show that SnBi2Te4 is a p-type, narrow-band gap semiconductor with a multivalley valence band structure. The complex crystal structure of SnBi2Te4 contributes to the very low lattice thermal conductivity of the order of 0.5 W m–1 K–1 at 300 K, leading to peak ZT values of 0.32 at 350 and 400 K for Sn0.95Bi2Te4 and SnBi2Te4, respectively.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Physical Chemistry C
ISSN
1932-7447
e-ISSN
1932-7455
Volume of the periodical
128
Issue of the periodical within the volume
44
Country of publishing house
US - UNITED STATES
Number of pages
17
Pages from-to
18976-18992
UT code for WoS article
001343802300001
EID of the result in the Scopus database
2-s2.0-85207440101