AsTe3: A novel crystalline semiconductor with ultralow thermal conductivity obtained by congruent crystallization from parent glass
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F24%3A00377727" target="_blank" >RIV/68407700:21340/24:00377727 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.jallcom.2024.175918" target="_blank" >https://doi.org/10.1016/j.jallcom.2024.175918</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jallcom.2024.175918" target="_blank" >10.1016/j.jallcom.2024.175918</a>
Alternative languages
Result language
angličtina
Original language name
AsTe3: A novel crystalline semiconductor with ultralow thermal conductivity obtained by congruent crystallization from parent glass
Original language description
The synthesis of novel narrow-band-gap semiconductors with ultralow thermal conductivity opens a pathway to the design of functional materials with high thermoelectric performance or with interesting optical sensitivity in the infrared range. Here, we report on the discovery of the novel crystalline binary AsTe3 (c-AsTe3) prepared by spark plasma sintering (SPS) from full and congruent crystallization of amorphous AsTe3 (a-AsTe3) previously prepared by twin roller quenching. X-ray diffraction suggests that the structure of c-AsTe3 can be described as a superstructure of elementary Te with a specific distribution of As and Te atoms. More specifically, it appears as an intergrowth of a Te subunit (3 atoms) and As2Te5 subunit (6 As + 15 Te atoms) separated with interlayer spaces. The optical transmittance measured on both crystalline and amorphous AsTe3 indicates a maximum transmittance of 22 % over the infrared range 10-25 mu m. Transport properties measurements, performed between 5 and 375 K, reveal that AsTe3 behaves as a lightly doped, p-type semiconductor. The complex crystal structure combined with a small-grain-size microstructure of the sample yields extremely low lattice thermal conductivity values of 0.35 W m(-1) K-1 near 300 K. This poor ability to conduct heat is the main property that gives rise to an estimated dimensionless thermoelectric figure of merit ZT of similar to 0.3 at 375 K. These findings show that the recrystallization of amorphous phases by SPS provides an effective approach for stabilizing novel phases with interesting functional properties.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Alloys and Compounds
ISSN
0925-8388
e-ISSN
1873-4669
Volume of the periodical
1004
Issue of the periodical within the volume
175918
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
12
Pages from-to
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UT code for WoS article
001302007900001
EID of the result in the Scopus database
2-s2.0-85201108457