Controlling defect chemistry in InTe by saturation annealing
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00565306" target="_blank" >RIV/68378271:_____/22:00565306 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1021/acsaem.2c02364" target="_blank" >https://doi.org/10.1021/acsaem.2c02364</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsaem.2c02364" target="_blank" >10.1021/acsaem.2c02364</a>
Alternative languages
Result language
angličtina
Original language name
Controlling defect chemistry in InTe by saturation annealing
Original language description
Achieving a precise control of defects in chalcogenide semiconductors is paramount to optimizing their thermoelectric properties. Recently, p-type InTe has emerged as a potential candidate for thermoelectric applications in power generation, mainly due to its extremely low lattice thermal conductivity. Here, we show that the concentration of inherent In vacancies in both single-crystalline and polycrystalline InTe samples can be successfully controlled through saturation annealing. This process, performed on both the In-rich and Te-rich sides of the solidus line at 943, 893, 843, and 943 K, respectively, results in variations in the hole concentration from 4.9 to 8.5 × 1019 cm-3 at 300 K. This narrow density range suggests that the defect chemistry in InTe plays a less critical role in determining its thermoelectric properties compared to other state-of-the-art thermoelectric chalcogenides.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Applied Energy Materials
ISSN
2574-0962
e-ISSN
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Volume of the periodical
5
Issue of the periodical within the volume
11
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
13714-13722
UT code for WoS article
000883759300001
EID of the result in the Scopus database
2-s2.0-85141706023