Enhanced thermoelectric performance of InTe through Pb doping

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00552125" target="_blank" >RIV/68378271:_____/21:00552125 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1039/d1tc04069c" target="_blank" >https://doi.org/10.1039/d1tc04069c</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/d1tc04069c" target="_blank" >10.1039/d1tc04069c</a>

Result language
angličtina
Original language name
Enhanced thermoelectric performance of InTe through Pb doping
Original language description
Chalcogenide semiconductors continue to be of prime interest for designing novel efficient materials for energy-conversion applications. Among them, the narrow-band-gap p-type semiconductor InTe exhibits high thermoelectric performance that mostly stems from its poor ability to transport heat. Here, we show that its thermoelectric figure of merit can be further enhanced by finely tuning the hole concentration through Pb doping. X-ray diffraction and scanning electron microscopy performed on the polycrystalline series In1-xPbxTe confirm that Pb substitutes for In with an estimated solubility limit below 1%.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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