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Electronic band structure vs intrinsic antisite doping in the MBE grown films MnTe · Bi(2-x)Te3(1-x/2) (0 ≥ x < 2): Evidence from spectroscopic ellipsometry and infrared studies

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00603632" target="_blank" >RIV/68378271:_____/24:00603632 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.1063/5.0238665" target="_blank" >https://doi.org/10.1063/5.0238665</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/5.0238665" target="_blank" >10.1063/5.0238665</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Electronic band structure vs intrinsic antisite doping in the MBE grown films MnTe · Bi(2-x)Te3(1-x/2) (0 ≥ x < 2): Evidence from spectroscopic ellipsometry and infrared studies

  • Original language description

    Intrinsic antisite defects influence the electronic and magnetic properties of antiferromagnetic topological insulators in the MnTe-Bi2Te3 family. These defects affect the position of the Fermi level and hinder the exploration of Dirac states. In this study, films with varying compositions of Bi and Te, ranging from MnTe to MnBi2Te4, were grown using molecular beam epitaxy on silicon substrates. The optical properties of these films were investigated using spectroscopic ellipsometry in the energy range of 0.5 to 6.5 electron volts, along with infrared reflectance and transmittance measurements. The analysis of optical spectra revealed that as the Bi and Te content increased, the dielectric function changed significantly. The imaginary part of the dielectric function showed a shift in its peak towards lower photon energies, which is characteristic of the final composition. Additionally, the stoichiometric MnBi2Te4 film exhibited an optical response associated with intrinsic antisite doping in the far-infrared range. However, in films with lower Bi and Te concentrations, the contribution from charge carriers was reduced. These changes in optical properties highlight the role of stoichiometry in controlling the electronic band structure and optical spectral weight distribution.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10306 - Optics (including laser optics and quantum optics)

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2024

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Physics Letters

  • ISSN

    0003-6951

  • e-ISSN

    1077-3118

  • Volume of the periodical

    125

  • Issue of the periodical within the volume

    26

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    8

  • Pages from-to

    262404

  • UT code for WoS article

    001386148900016

  • EID of the result in the Scopus database

    2-s2.0-85213061977