Optical and impedance spectroscopy of undoped and In, Ga and Al doped ZnO thin films deposited by pulsed laser deposition on sapphire substrates
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00638165" target="_blank" >RIV/68378271:_____/24:00638165 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Optical and impedance spectroscopy of undoped and In, Ga and Al doped ZnO thin films deposited by pulsed laser deposition on sapphire substrates
Original language description
In this work, the nominally undoped and In, Ga and Al-doped ZnO thin films were pulsed laser deposited (PLD) on sapphire substrates and tested for potential applications in photodetector devices. Impedance spectroscopy was employed to investigate the electrical properties and charge transport mechanisms in the ZnO films. The IS data were analyzed using equivalent circuit models to extract key parameters such as carrier concentration, mobility, and interfacial resistance. The results demonstrated the impact of Indium doping on the electrical characteristics of the ZnO host material. The combined analysis provided a comprehensive understanding of the optoelectronic properties of znO films. The findings suggest that optimized Indium doping can enhance the photoresponse and charge transport properties of ZnO, making ZnO a promising material for high-performance photodetector applications. This study highlights the potential of ZnO in developing next-generation optoelectronic devices with improved sensitivity and response times.
Czech name
—
Czech description
—
Classification
Type
O - Miscellaneous
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů