Effects of sputtering pressure on the properties of ZnO:Ga films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43916612" target="_blank" >RIV/49777513:23640/12:43916612 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Effects of sputtering pressure on the properties of ZnO:Ga films
Original language description
Transparent conductive oxides based on ZnO are promising alternative to Indium doped tin oxid in thin film solar photovoltaic cells. Influence of different sputtering pressure on surface morfology and structural, electrical and optical properties of Ga doped ZnO thin films were observed.
Czech name
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Czech description
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Project
<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Progress in Applied Surface, Inteface and Thin Film Science 2012, SURFINT-SREN III
ISBN
978-80-223-3212-5
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
106-107
Publisher name
Univerzita Komenského Bratislava
Place of publication
Bratislava
Event location
Florence, Italie
Event date
May 14, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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