Advanced perspective on heavily phosphorus-doped diamond layers via optical emission spectroscopy

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00618709" target="_blank" >RIV/68378271:_____/25:00618709 - isvavai.cz</a>

Result on the web

<a href="https://hdl.handle.net/11104/0365613" target="_blank" >https://hdl.handle.net/11104/0365613</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0238713" target="_blank" >10.1063/5.0238713</a>

Result language

angličtina

Original language name

Advanced perspective on heavily phosphorus-doped diamond layers via optical emission spectroscopy

Original language description

Although heavily phosphorus-doped diamond (PDD) holds great potential for advanced device applications, incorporating phosphorus into diamond remains challenging with conventional growth methods. In this study, optical emission spectroscopy (OES) was used to correlate the emission intensity ratio of PH to CH radicals (IPH/ICH) with phosphorus concentration ([P]) in diamond layers synthesized under varying phosphine ([PH3]/[H2]) and methane ([CH4]/[H2]) concentrations using microwave plasma-enhanced chemical vapor deposition. OES results revealed a strong proportional relationship between IPH/ICH and [P] across different [PH3]/[CH4] ratios. However, beyond a maximum [P] of ∼7.0 × 1020 atoms/cm3, further increases in IPH/ICH did not lead to higher [P] with a significant reduction in phosphorus incorporation efficiency (η), consistent with the solubility limits of phosphorus in diamond. At lower [PH3]/[H2], [P] did not scale proportionally with [PH3]/[CH4], exhibiting nonlinear behavior due to phosphorus contamination (Pcont.) in the reaction chamber, which provided sufficient PHx radicals to grow heavily PDD without PH3 gas flow. By understanding plasma properties and their effects on [P], heavily PDD has been effectively achieved with enhancing [P] (up to 745%) and η (up to 143%) by alternating the dominant radical species in the plasma. Time-dependent control of precursor gas flow allowed modulation of IPH/ICH, improving control over phosphorus incorporation. This novel growth approach offers valuable insights for optimizing PDD synthesis, enabling more efficient phosphorus incorporation for electronic, electrochemical, and quantum applications.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2025

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

APL Materials

ISSN

2166-532X

e-ISSN

2166-532X

Volume of the periodical

13

Issue of the periodical within the volume

1

Country of publishing house

US - UNITED STATES

Number of pages

13

Pages from-to

011118

UT code for WoS article

001408653900001

EID of the result in the Scopus database

2-s2.0-85215756441