Novel growth process in the synthesis of heavily phosphorus-doped nanocrystalline diamond layers

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388998%3A_____%2F25%3A00618599" target="_blank" >RIV/61388998:_____/25:00618599 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/25:00618599

Result on the web

<a href="https://doi.org/10.1016/j.diamond.2025.112118" target="_blank" >https://doi.org/10.1016/j.diamond.2025.112118</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.diamond.2025.112118" target="_blank" >10.1016/j.diamond.2025.112118</a>

Result language

angličtina

Original language name

Novel growth process in the synthesis of heavily phosphorus-doped nanocrystalline diamond layers

Original language description

Phosphorus-doped diamond (PDD) offers significant potential for innovative applications, yet traditional growth techniques face difficulties in achieving high levels of phosphorus incorporation. This study presents a novel growth process to enhance phosphorus incorporation into diamond layers through transient plasma conditions under CH4 gas pulsing. Unlike conventional approaches, heavily PDD layers ([P] ∼3 × 1020 atoms/cm3) are obtained at low phosphine concentrations by utilizing phosphorus contamination as the primary source of PH radicals. Time-resolved optical emission spectroscopy analysis reveals that, when the CH4 gas flow is turned off, the distinct relaxation dynamics of CH and PH radicals promote a non-equilibrium plasma state in which sufficient quantities of both radicals coexist. Additionally, the enhanced hydrogen etching process leads to the formation of faceted crystalline grains with reduced nucleation density and fewer non-diamond compounds. In contrast to the fine grains typically observed in conventional heavily PDD nanocrystalline layers, the phosphorus concentration exhibits a proportional trend with grain size, suggesting that phosphorus is primarily incorporated within the diamond grains rather than at grain boundaries. These findings pave the way for achieving heavily PDD layers with precise microstructural control, supporting the development of advanced devices.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10102 - Applied mathematics

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2025

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

1879-0062

Volume of the periodical

154

Issue of the periodical within the volume

April

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

11

Pages from-to

112118

UT code for WoS article

001430878200001

EID of the result in the Scopus database

2-s2.0-85217925946