Phonon properties and unconventional heat transfer in a quasi-two-dimensional Bi2O2Se crystal
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00627726" target="_blank" >RIV/68378271:_____/25:00627726 - isvavai.cz</a>
Alternative codes found
RIV/00216275:25310/25:39922910 RIV/00216224:14310/25:00141326 RIV/00216208:11320/25:10499663
Result on the web
<a href="https://doi.org/10.1103/PhysRevMaterials.9.054603" target="_blank" >https://doi.org/10.1103/PhysRevMaterials.9.054603</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevMaterials.9.054603" target="_blank" >10.1103/PhysRevMaterials.9.054603</a>
Alternative languages
Result language
angličtina
Original language name
Phonon properties and unconventional heat transfer in a quasi-two-dimensional Bi2O2Se crystal
Original language description
Bi2O2Se belongs to a group of quasi-2D semiconductors that can replace silicon in future high-speed/low-power electronics. However, the correlation between crystal/band structure and other physical properties still eludes understanding: carrier mobility increases non-intuitively with carrier concentration, the observed T2 temperature dependence of resistivity lacks explanation. Moreover, a very high relative out-of-plane permittivity of about 150 has been reported in the literature. A proper explanation for such a high permittivity is still lacking. We have performed infrared (IR) reflectivity and Raman scattering experiments on a large perfect single crystal with defined mosaicity, carrier concentration, and mobility. Five of the eight phonons allowed by factor group theory have been observed and their symmetries determined. The IR spectra show that the permittivity measured in the tetragonal plane is as high as εr≈500, and this high value is due to a strong polar phonon with a low frequency of ∼34 cm-1 (∼1 THz). Such an unusually high permittivity allows the screening of charge defects, leading to the observation of high electron mobility at low temperatures. It also allows effective modulation doping providing a platform for high-performance 2D electronics. DFT calculations suggest the existence of a very low-frequency acoustic phonon ∼14 cm-1 (∼0.4 THz). Both the low-frequency phonons cause anomalous phonon DOS, which is reflected in the unconventional temperature dependence of the heat capacity, Cp≈T3.5. The temperature-dependent, two-component group velocity is proposed to explain the unusual temperature dependence of the thermal conductivity, k≈T1.5.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review Materials
ISSN
2475-9953
e-ISSN
2475-9953
Volume of the periodical
9
Issue of the periodical within the volume
5
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
054603
UT code for WoS article
001495036600002
EID of the result in the Scopus database
2-s2.0-105004739038