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Thickness dependent interplay between trion binding energy and electron density in CVD-grown MoS2

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00643810" target="_blank" >RIV/68378271:_____/25:00643810 - isvavai.cz</a>

  • Alternative codes found

    RIV/68407700:21230/25:00387330

  • Result on the web

    <a href="https://hdl.handle.net/11104/0374171" target="_blank" >https://hdl.handle.net/11104/0374171</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1088/1402-4896/ae26db" target="_blank" >10.1088/1402-4896/ae26db</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Thickness dependent interplay between trion binding energy and electron density in CVD-grown MoS2

  • Original language description

    Among the transition metal dichalcogenides, single layer MoS2 has drawn great attention due to its direct bandgap of approximately 1.9 eV at room temperature, exhibiting extremely high excitonic photoluminescence in the visible range, making it a promising material for opto-electronic applications. In this work, we synthesized MoS2 on a Si/SiO2 substrate using a single-step atmospheric pressure chemical vapor deposition process, successfully yielding bilayer to few layered MoS2 films. The layer dependence of the as-grown MoS2 layers was analyzed from the peak energy difference (Δ) between the in-plane (E2g) and out-of-plane (A1g) phonon modes in the Raman spectra to quantify the specific number of layers within the MoS2 flake (2–15 layers). Room-temperature photoluminescence characteristics of the excitonic emission exhibited a redshift in energy by 0.04 eV as the number of layers increased in MoS2. An increase in the number of layers exhibited a decreasing dispersion of trion binding energy from a standardized fitting procedure of the PL spectra under appropriate boundary conditions. Henceforth, we observe a thickness dependent inversely related interplay between trion binding energy and electron density (n) due to defects in MoS2, which is crucial for future opto-electronic applications.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2025

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Physica Scripta

  • ISSN

    0031-8949

  • e-ISSN

    1402-4896

  • Volume of the periodical

    100

  • Issue of the periodical within the volume

    12

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    9

  • Pages from-to

    125947

  • UT code for WoS article

    001645186600001

  • EID of the result in the Scopus database

    2-s2.0-105034108251