First generation 4H-SiC LGAD production and its performance evaluation

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00644706" target="_blank" >RIV/68378271:_____/25:00644706 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21340/25:00385873

Result on the web

<a href="https://hdl.handle.net/11104/0374585" target="_blank" >https://hdl.handle.net/11104/0374585</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/20/08/C08022" target="_blank" >10.1088/1748-0221/20/08/C08022</a>

Result language

angličtina

Original language name

First generation 4H-SiC LGAD production and its performance evaluation

Original language description

This contribution will delve into the design and performance of the newly produced Silicon Carbide Low Gain Avalanche Detectors (4H-SiC LGADs) and provide a comprehensive summary of their measured characteristics. This includes an analysis of the detector's performance, temperature stability, and the effectiveness of the internal gain layer in improving signal generation. The 4H-SiC is re-emerging as a strong candidate for the next generation of semiconductor detectors. This material offers several advantages, including high radiation tolerance and the ability to operate over a wide range of temperatures without significant annealing effects. However, the signals generated by minimum ionizing particles in the 4H-SiC detector are lower compared to the signal produced by standard silicon detectors due to their higher bandgap energy [1]. This is addressed by implementing a charge multiplication layer, which results in the intrinsic gain of the device. The presented 4H-SiC LGADs produced by onsemi are specifically designed and optimized for fabrication on the n-type substrate/epi wafer with the gain layer implanted approximately 1 μm below the surface. The first iteration of these LGAD structures was manufactured in early 2024 and since then has undergone laboratory evaluation. The measured properties of these detectors align well with the predictions arising from the extensive TCAD simulation studies.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10303 - Particles and field physics

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2025

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

1748-0221

Volume of the periodical

20

Issue of the periodical within the volume

8

Country of publishing house

US - UNITED STATES

Number of pages

6

Pages from-to

C08022

UT code for WoS article

001574279000001

EID of the result in the Scopus database

2-s2.0-105014173562