Exploring the design and measurements of next-generation 4H-SiC LGADs
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00640825" target="_blank" >RIV/68378271:_____/25:00640825 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/25:00385868
Result on the web
<a href="https://doi.org/10.1016/j.nima.2025.170742" target="_blank" >https://doi.org/10.1016/j.nima.2025.170742</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.nima.2025.170742" target="_blank" >10.1016/j.nima.2025.170742</a>
Alternative languages
Result language
angličtina
Original language name
Exploring the design and measurements of next-generation 4H-SiC LGADs
Original language description
This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics such as the internal gain layer’s efficiency in enhancing signal generation. Initial laboratory and Transient Current Technique (TCT) measurements provide insight into the device’s stability and response to the signal. Due to the increase of availability provided by the industry, 4H-SiC is emerging as a strong candidate for the next-generation of semiconductor detectors. Such sensors are promising due to the inherent radiation tolerance of 4H-SiC and its stable operation across a wide temperature range. However, due to the wider-bandgap of 4H-SiC compared to standard silicon, and difficulty to produce high-quality layers thicker than 50 μ m, an internal charge multiplication layer needs to be introduced. The presented 4H-SiC LGADs, fabricated by onsemi, are optimized for an N-type substrate/epi wafer. The initial TCT and laboratory test results demonstrate fast charge collection and uniform multiplication across multiple samples produced on a single wafer. n•First systematic electrical characterization of 4H-SiC LGADs.n•High production yield and stability of 4H-SiC LGADs from electrical testing.n•First particle detection using silicon carbide LGADs.•Matching gain measurement in from TCT and beta source tests.n•Timing precision of silicon carbide LGADs down to 100 ps.n
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10303 - Particles and field physics
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nuclear Instruments & Methods in Physics Research Section A
ISSN
0168-9002
e-ISSN
1872-9576
Volume of the periodical
1080
Issue of the periodical within the volume
Nov
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
5
Pages from-to
170742
UT code for WoS article
001523233600005
EID of the result in the Scopus database
2-s2.0-105008990791