Si and Gradient Layer Formed by RF PACVD Technology

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F11%3A00181099" target="_blank" >RIV/68407700:21220/11:00181099 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Si and Gradient Layer Formed by RF PACVD Technology

Original language description

They were investigated Si layers (and gradient layer) formed by RF PACVD technology. Si layers are useful and very important intermediate layers before depositing DLC coatings. We reached different Si layers by RF PACVD technology from Hexamethyldisiloxane - HMDSO with various diluted supporting gas (Ar, H2, N2) and we have investigated their properties. To compare the characteristics of layers we prepared gradient film, which contents carbon of CH4. Mechanical behavior of the substrate - coating systems was determined by nanoindentation load - displacement curves. Results show that the diluted gas is remarkable parameter for the properties of the Si intermediate layers.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BL - Plasma physics and discharge through gases

OECD FORD branch

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Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Výrobné inžinierstvo

ISSN

1335-7972

e-ISSN

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Volume of the periodical

10

Issue of the periodical within the volume

2

Country of publishing house

SK - SLOVAKIA

Number of pages

4

Pages from-to

32-35

UT code for WoS article

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EID of the result in the Scopus database

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