a-SiC Thin Film Prepared by PECVD Technique
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F12%3A00199833" target="_blank" >RIV/68407700:21220/12:00199833 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
a-SiC Thin Film Prepared by PECVD Technique
Original language description
In this contribution the effects of the substrate on the mechanical properties of amorphous silicon carbon (a-SiC) thin films were investigated. Coatings of thickness approximately 2 ?m were prepared by plasma enhanced chemical vapor deposition (PECVD) technique on three various metal substrates (AISI M2, AISI L2 and TiAl6V4). The a-SiC layers were prepared by vapor decomposition of liquid Hexamethyldisiloxane (HMDSO) diluted and mixed by mixture of argon and methane. We studied deposition rate as function flow of HMDSO, adhesive properties of coatings, coefficient of friction and running of hardness by cyclic nanoindentation test. The results showed that vapors of HMDSO causes the highest deposition rate of film (35 nm/min) at flow 1 g/h. Further, thesubstrate AISI M2 (hardened tool steel) caused better mechanical properties of a-SiC coating than others studied substrates.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
JK - Corrosion and material surfaces
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů