Influence of irradiation on defects creation in PIN diode structure
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F12%3A00204364" target="_blank" >RIV/68407700:21220/12:00204364 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21670/12:00204364
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Influence of irradiation on defects creation in PIN diode structure
Original language description
Studies of radiation defects continue to be important and will find increasing application as the radiation doses expected to be measured by semiconductor detectors in future experiments will keep increasing to higher values. An endeavor to capture someof the changes associated with high radiation doses has been the basic motivation for the present work.
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
BG - Nuclear, atomic and molecular physics, accelerators
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/LA08032" target="_blank" >LA08032: International experiment ATLAS-CERN</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of 18th Internacional Conference on applied physics of condensed matter
ISBN
978-80-227-3720-3
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
67-70
Publisher name
Slovenská technická univerzita
Place of publication
Bratislava
Event location
Strbske pleso
Event date
Jun 20, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—