Investigation of SiC 1200 V, 50 A Inverter with Improved Design

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F15%3A00231983" target="_blank" >RIV/68407700:21220/15:00231983 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Investigation of SiC 1200 V, 50 A Inverter with Improved Design
Original language description
The experimental results of high frequency SiC MOSFET inverter with the CCS050M12CM2 1200 V, 50 A module applied to a permanent magnet synchronous motor are described in this paper. Two versions of inverter design are compared. The first version of the inverter is designed in the same way as for a traditional IGBT inverter. owever it couldn’t function at nominal voltage due to voltage ringing caused by parasitic inductances. The second version of the SiC inverter was designed in order to reduce the parasitic inductances. The inverter could function at nominal voltage 560 V. The voltage overshoot was also reduced by increasing slightly the value of the gate resistance slowing down the switching speed.
Czech name
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Czech description
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Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the Electrical Drives and Power Electronics (EDPE 2015)
ISBN
978-1-4673-9661-5
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
54-59
Publisher name
TU Košice, FEI
Place of publication
Košice
Event location
Tatranská Lomnica
Event date
Sep 21, 2015
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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