2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F20%3A00340852" target="_blank" >RIV/68407700:21220/20:00340852 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1140/epjb/e2020-100543-6" target="_blank" >https://doi.org/10.1140/epjb/e2020-100543-6</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1140/epjb/e2020-100543-6" target="_blank" >10.1140/epjb/e2020-100543-6</a>

Result language
angličtina
Original language name
2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties
Original language description
The stability and electronic and optical properties of two-dimensional (2D) SnTe monolayer has been systematically studied by using first-principles calculations based on density functional theory. Our computations demonstrate that the predicted 2D SnTe monolayer is a stable quasi-direct semiconductor. Also, analysis of its electronic property shows that the ground state of this monolayer is a quasi-direct semiconductor with a band gap of 2.00. This band gap can be effectively modulated by external strains. Investigation of optical properties shows that monolayer SnTe exhibits significant absorption and reflectivity in the ultraviolet region of the electromagnetic spectrum.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10306 - Optics (including laser optics and quantum optics)

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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