Transient Effects on High Voltage Diode Stack under Reverse Bias

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F03%3A03087762" target="_blank" >RIV/68407700:21230/03:03087762 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Transient Effects on High Voltage Diode Stack under Reverse Bias
Original language description
This article describes and analzses the fast transient processes that can occur during a local non-destructive breakdown in a circuit consisting of a serial connection of reverse biased high-voltage silicon diodes. Measurements of the reverse current-voltage characteristics of the individual diodes showed that a breakdown had occured. However, this phenomenon is very difficult to study when there are many diodes connected in series in a stack. A physicalmodel was therefore created to show the individuallocal breakdown in this case. The validity of the model was verified by means of circuit simulation of the process under investigation. The statistical significance of the process was considered with respect to the reliability and lifetime of a high-voltage diode stack.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Project
<a href="/en/project/GA102%2F01%2F1353" target="_blank" >GA102/01/1353: Electromagnetic compatibility of the power switch mode power sources</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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